VBUS054DD-HF4 document number 81928 rev. 1.1, 02-mar-10 vishay semiconductors www.vishay.com 1 214 8 2 214 8 3 12 43 5 for technical support, please contact: esdprotection@vishay.com 4-line bus-port esd-protection features ? ultra compact llp1010-5l package ? low package height < 0.4 mm ? 4-line usb esd-protection ? low leakage current ? low load capacitance c d = 0.8 pf ? esd-protection to iec 61000-4-2 15 kv contact discharge 15 kv air discharge ? pin plating nipdau (e4) no whisker growth ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec marking (example only) dot = pin 1 marking x = date code y = type code (see table below) ordering information package data absolute maximum ratings ** please see document ?vishay material category policy?: www.vishay.com/doc?99902 20932 xy device name ordering code taped units per reel (8 mm tape on 7" reel) minimum order quantity VBUS054DD-HF4 VBUS054DD-HF4-gs08 5000 5000 device name package name marking code weight molding compound flammability rating moisture sensitivity level soldering conditions VBUS054DD-HF4 llp1010-5l c 1.07 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals rating test conditions symbol value unit peak pulse current pin 1, 2, 3 or 4 to pin 5 acc. iec 61000-4-5; t p = 8/20 s; single shot i ppm 3a peak pulse power pin 1, 2, 3 or 4 to pin 5 acc. iec 61000-4-5; t p = 8/20 s; single shot p pp 45 w esd immunity contact discharge acc. iec 61000-4-2; 10 pulses v esd 15 kv air discharge acc. ie c 61000-4-2; 10 pulses v esd 15 kv operating temperature junction temperature t j - 40 to + 125 c storage temperature t stg - 55 to + 150 c
www.vishay.com 2 document number 81928 rev. 1.1, 02-mar-10 VBUS054DD-HF4 vishay semiconductors for technical support, please contact: esdprotection@vishay.com electrical characteristics ratings at 25 c, ambient temperature unless otherwise specified VBUS054DD-HF4 pin 1, 2, 3 or 4 to pin 5 typical characteristics (t amb = 25 c, unless otherwise specified) parameter test conditions/remarks symbol min. ty p. max. unit protection paths number of line wh ich can be protected n lines 4 lines reverse stand-off voltage at i r = 0.1 a v rwm 5v reverse current at v in = v rwm = 5 v i r < 0.01 0.1 a reverse breakdown voltage at i r = 1 ma v br 6.988.7v reverse clamping voltage at i pp = 3 a; acc. iec 61000-4-5 v c 16 19 v forward clamping voltage at i f = 3 a; acc. iec 61000-4-5 v f 3.5 4.5 v capacitance v in = 0 v c d 0.8 1 pf v in = 2.5 v c d 0.5 0.8 pf line symmetry difference of the line capacitances dc d 0.05 pf figure 1. 8/20 s peak pulse current wave form acc. iec 61000-4-5 figure 2. esd discharge current wave form acc. iec 61000-4-2 (330 /150 pf) 0 % 20 % 40 % 60 % 8 0 % 100 % 010203040 time ( s) i ppm 20 s to 50 % 8 s to 100 % 2054 8 0 % 20 % 40 % 60 % 8 0 % 100 % 120 % - 10 0 10 20 30 40 50 60 70 8 0 90 100 time (ns) discharge c u rrent i esd rise time = 0.7 ns to 1 ns 53 % 27 % 20557 figure 3. typical capacitance c d vs. reverse voltage v r figure 4. typical forward current i f vs. forward voltage v f 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 012345 v r at pin 1, 2, 3 or 4 ( v ) c d (pf) f = 1 mhz; pin 5 connected to gro u nd other pins at 3 v other pins at 0 v other pins at 5 v 21503 0.001 0.01 0.1 1 10 100 0.5 0.6 0.7 0. 8 0.9 1.0 1.1 v f ( v ) i f (ma) pin 5 to pin 1, 2, 3, or 4 21504
VBUS054DD-HF4 document number 81928 rev. 1.1, 02-mar-10 vishay semiconductors www.vishay.com 3 for technical support, please contact: esdprotection@vishay.com application note: with the VBUS054DD-HF4 a double, high speed usb-port or up to 4 other high speed signal or data lines can be protected against transient volt age signals. negative tr ansients will be clamped clos e below the ground level while positive transients will be clamped close above the 5 v working range. the high speed data lines, d 1 +, d 2 +, d 1 - and d 2 -, are connected to pin 1, 2, 3, and 4, pin 5 is connected to ground. as long as the signal voltage on the data lines is between the ground- and the break through-level , the low input capacitance of each channel offer a very high isolation to ground and to the other data lines. but as soon as any transient signal exceeds this working range, the VBUS054DD-HF4 clamps the transient to ground or to the avalanche breakthrough voltage level. background knowledge: a zener- or avalanche diode is an idea l device for ?cutting? or ?clamping? voltage spikes or voltage transients down to low and uncritical voltage values. the breakthrough voltage can easily be adjusted by the chip- technology to any desired value within a wide range. up to about 6 v the ?zener-effect? (tunnel-effect) is responsible for the breakthrough characteristic. above 6 v the so-called ?avalanche-effect?" is responsible. this is a more abrupt breakthrough phenomenon. because of the typical ?z-shape? of the current-voltage-curve of such diodes, these diodes are generally called ?z-diode ? (= zener or avalanche diodes). an equally important parameter for a protection diode is the esd- and surge-power that allows the diode to short current in the pulse to ground without being destroyed. this requirement can be adjusted by the size of the silicon chip (crystal). the bigger the active area the higher the current that the diode can short to ground. but the active area is also responsible for the diode capacitance - the bigger the area the higher the capacitance. the dilemma is that a lot of applications require an effective protection against more then 8 kv esd while the capacitance must be lower then 5 pf! this is well out of the normal range of a z-diode. however, a protection diode with a low capacitance pn-diode (switching diode or junction diode) in series with a z-diode, can fulfil figure 5. typical reverse voltage v r vs. reverse current i r 0 1 2 3 4 5 6 7 8 9 0.01 0.1 1 10 1 10 2 10 3 10 4 i r ( a) v r ( v ) pin 1, 2, 3, or 4 to pin 21505 figure 6. typical peak clamping voltage v c vs. peak pulse current i pp 0 5 10 15 20 25 012345 i pp (a) v c ( v ) meas u red acc. iec 61000-4-5 ( 8 /20 s - w a v e form) v c pin 1, 2, 3, or 4 to pin 5 pin 5 to pin 1, 2, 3, or 4 21506 t w i n u s b - p o r t d 2+ g n d r e c e i v e r ic d 2- d 1+ d 1- 21507 12 43 5
www.vishay.com 4 document number 81928 rev. 1.1, 02-mar-10 VBUS054DD-HF4 vishay semiconductors for technical support, please contact: esdprotection@vishay.com both requirements simultaneously: low capacitance a nd high esd- and/or surge immunity become possible! a small signal (v pp < 100 mv) just sees the low capacitance of the pn-diode, while the big capacitance of the z-diode in series remains "invisible". such a constellation with a z-diode and a small pn-diode (with low capacitanc e) in series (anti-serial) is a real unidirectional protection device. the clamp- ing current can only flow in one direction (forward) in the pn-diode. the reverse path is blocked. another pn-diode "opens" the back path so that the protection device becomes bidirectional! because the clamping voltage levels in forward and reverse directions are different, such a protection device has a bi directional and as ymmetrical clamping behaviour ( bias ) just like a single z-diode. the VBUS054DD-HF4 offers four inputs with such protection circuit inside. c d = 0.4 pf c tot d zd cz d = 110 pf 20400 20401 d zd i/o gnd 20404 d 1 zd d 2 i/o gnd 2150 8 5 4 3 1 2
VBUS054DD-HF4 document number 81928 rev. 1.1, 02-mar-10 vishay semiconductors www.vishay.com 5 for technical support, please contact: esdprotection@vishay.com package dimensions in millimeter s (inches): llp1010-5l solder resist mask solder pad 0.125 (0.005) ref. 0.03 (0.001) 0 (0.000) pin 1 marking 0.4 (0.016) 0.33 (0.013) 0.5 (0.020) b sc 0.2 (0.00 8 ) exp. dap 0.2 8 (0.011) 0.22 (0.009) 0.65 (0.026) exp. dap 0.25 (0.010) 0.15 (0.006) 1.05 (0.041) 0.95 (0.037) 1.05 (0.041) 0.95 (0.037) soldermask opening 0.03 meas u red middle of the package 0.25 (0.010) 0.5 (0.020) 0.65 (0.026) 0.2 (0.00 8 ) 0.15 (0.006) 0.35 (0.014) 0.2 (0.00 8 ) foot print recommendation: 213 8 0 doc u ment no.:s 8 - v -3906.04-007 (4) created - date: 15. april. 200 8 re v . 2 - date: 09. sep. 200 8
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